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Growth and Study of Ultra-Wide Bandgap Semiconductors Including High Aluminum Content Algan, Boron Nitride and Gallium Oxide

1 faculty research Growth and Study of Ultra-Wide Bandgap Semiconductors Including High Aluminum Content Algan, Boron Nitride and Gallium Oxide on GradNova.

I

Associate Professor

Department of Electrical Engineering

University of South Carolina

Computer Simulation of These Devices

Fabrication of Novel High-Power Electronic and Photonic Devices

Growth and Study of Ultra-Wide Bandgap Semiconductors Including High Aluminum Content Algan, Boron Nitride and Gallium Oxide

Ga2o3 and Related Materials

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